AVIC (Chongqing) Microelectronics Co., Ltd. recently released a gallium nitride (GaN) MISHEMT power device N1BH60010A based on a silicon-based gallium nitride (GaN-on-Si) wafer, which is the first 8-inch GaN power device in China. It achieves 600 V withstand voltage and 10 A output current, and can be widely used in power electronic systems such as PFC, DC/DC converter, DC/AC inverter, etc., for power management of current digital electronic equipment, household appliances, electric vehicles, solar power generation, etc. The application market provides a more compact and efficient solution.
Compared with traditional semiconductor materials, GaN as a third-generation semiconductor material has the advantages of wide band gap, direct band gap, high electron drift speed, high thermal conductivity, high voltage resistance, high temperature resistance, corrosion resistance and radiation resistance. High temperature, high power, high frequency and anti-irradiation electronics are uniquely advantageous. Silicon-based gallium nitride has a significant cost advantage, and can achieve low-cost production by increasing the diameter of the silicon wafer. Therefore, GaN power devices on silicon substrates are considered to be the most competitive direction in the market.
AVIC (Chongqing) Microelectronics Co., Ltd. began research on silicon-based GaN power devices in 2013, and successfully developed 8-inch GaN MISHEMT with good switching characteristics and low parasitic effects on the international leading 8-inch compound semiconductor process line. power component. This product is tailored to the needs of modern power management systems for high power density, energy efficient applications, with DC output current greater than 10 A, pulse output current 35 A, withstand voltage 600 V, on-resistance 0.27 Ω, When the gate current is less than 10 nA, 600 V, the shutdown leakage is less than 10 μA, the input capacitance is 52 pF, the output capacitance is 26 pF, and the reverse capacitance is 21 pF, which shows excellent device performance. Compared with the Si Super Junction MOSFET, the GaN MISHEMT can reduce the parasitic capacitance by 90% under the same conditions, and the reverse recovery charge is close to 0, indicating its good application prospect in high efficiency and high speed power switching. Compared with other international mainstream GaN device suppliers, AVIC's GaN devices have achieved comprehensive performance in the industry, especially in terms of shutdown leakage and parasitic capacitance.
AVIC (Chongqing) Microelectronics Co., Ltd. is a power semiconductor manufacturing company mainly targeting the power supply and power management market. Its products include semiconductor power devices, integrated circuits, MEMS sensors and compound semiconductor devices. The company currently has an 8-inch semiconductor production line with a large-scale production capacity of GaN power devices.
Compared with traditional semiconductor materials, GaN as a third-generation semiconductor material has the advantages of wide band gap, direct band gap, high electron drift speed, high thermal conductivity, high voltage resistance, high temperature resistance, corrosion resistance and radiation resistance. High temperature, high power, high frequency and anti-irradiation electronics are uniquely advantageous. Silicon-based gallium nitride has a significant cost advantage, and can achieve low-cost production by increasing the diameter of the silicon wafer. Therefore, GaN power devices on silicon substrates are considered to be the most competitive direction in the market.
AVIC (Chongqing) Microelectronics Co., Ltd. began research on silicon-based GaN power devices in 2013, and successfully developed 8-inch GaN MISHEMT with good switching characteristics and low parasitic effects on the international leading 8-inch compound semiconductor process line. power component. This product is tailored to the needs of modern power management systems for high power density, energy efficient applications, with DC output current greater than 10 A, pulse output current 35 A, withstand voltage 600 V, on-resistance 0.27 Ω, When the gate current is less than 10 nA, 600 V, the shutdown leakage is less than 10 μA, the input capacitance is 52 pF, the output capacitance is 26 pF, and the reverse capacitance is 21 pF, which shows excellent device performance. Compared with the Si Super Junction MOSFET, the GaN MISHEMT can reduce the parasitic capacitance by 90% under the same conditions, and the reverse recovery charge is close to 0, indicating its good application prospect in high efficiency and high speed power switching. Compared with other international mainstream GaN device suppliers, AVIC's GaN devices have achieved comprehensive performance in the industry, especially in terms of shutdown leakage and parasitic capacitance.
AVIC (Chongqing) Microelectronics Co., Ltd. is a power semiconductor manufacturing company mainly targeting the power supply and power management market. Its products include semiconductor power devices, integrated circuits, MEMS sensors and compound semiconductor devices. The company currently has an 8-inch semiconductor production line with a large-scale production capacity of GaN power devices.
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