Vishay released a new chip-level MOSFET that can reduce smart phones, tablets...

The new MICRO FOOT device achieves 35mΩ on-resistance at 1.8V voltage and ±8V VGS for the first time

Vishay released a new power MOSFET---Si8457DB that helps reduce power consumption and extend battery life in smart phones, tablets, wearable devices and high-end notebook computers. The new chip-scale MICRO FOOT P-channel Si8457DB has the lowest on-resistance among MOSFETs with a 1.6mm x 1.6mm footprint under 1.8V gate drive, and is the only such device with a VGS of ±8V. It powers lithium-ion batteries. The application provides an additional safety margin.

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The Si8457DB can be used as a battery switch and load switch in power management applications. The on-resistances at 4.5V, 2.5V, and 1.8V are 19mΩ, 23.4mΩ, and 35mΩ, respectively. Compared with the closest device in the DFN 1.6mm square package, the 1.8V turn-on voltage of this device is reduced by 17%. The device can be turned on at the lowest -1.8V, plus ±8V VGS, provides a safety margin, flexible gate drive design and high performance for most lithium-ion battery-powered applications.

The Si8457DB is the first in the industry to achieve such performance, thanks to the extremely low on-resistance per unit area, which enables the device to save space while also reducing battery power consumption in mobile applications. The low on-resistance of the device means that the voltage drop under DC voltage and pulse peak current is very low, and less power is wasted in the form of heat. The device can be turned on at -1.8V, which simplifies the design work such as adapting to low battery voltage or IC load pulling down the gate-source voltage.

Si8457DB is a key component of the high-efficiency load switch of mobile power management. As a P-channel MOSFET, Si8457DB has obvious advantages. It can be turned on without a charge pump in the circuit, and can directly work with a large number of power management and control ICs in various power supplies.

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