According to data released by TrendForce's memory storage business unit DRAMeXchange on Tuesday, the contract price of 4GB DDR3 memory modules fell by 6.15% on average, and the 4GB DDR4 memory dropped 8.82%. (Yonhap)
Unfortunately, both of these products are the mainstay of Samsung and Hynix Semiconductor's revenue, and the profit outlook of the two companies is expected to be affected. According to statistics, Samsung DRAM accounted for 46.4% in the fourth quarter of last year, and Hynix also had 27.9%, which together reached 74.3%.
In addition, South Korea’s exports have been in decline for 13 consecutive months, and the decline in DRAM prices is also considered to be one of the main reasons.
In order to reduce costs and improve competitiveness, Samsung and Hynix have plans to develop higher-level processes. Samsung is currently introducing a 16-nm process, while Hynix is ​​preparing to adopt 21-nm.
The diameter of the DO-41 diode body is in the range of 2.0mm~2.7mm, the length of the diode body is between 4~5.2mm, the diameter of the pins at both ends is between 0.71mm~0.86mm, and the overall length is 25.4mm.
This DO-41 plastic package is available in a through-hole version. This axial lead device is ideal for customer premises equipment (CPE), such as telephones, answering machines, modems, and fax interfaces. When appropriate over-current protection is included, the DO-41 package series can also be used for over-voltage protection in applications such as T1/E1/J1 relay cards.
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