GT Crystal Systems has entered into a purchase agreement with Chongqing Silian Optoelectronics Technology Co., Ltd. ("Silian") to supply 500,000 TIE (equivalent to 2 inches) 6-inch C-face sapphire core material, which will be used by Quadruple. Materials are produced in high quality sapphire substrates for the high brightness LED industry.
According to GT Advanced Technologies, the agreement further demonstrates that the sapphire material grown in the ASFTM furnace is well suited for use in the LED supply chain. Silian Optoelectronics said: The sapphire grown in the ASF furnace can help Silian and our customers achieve the high output required by the increasingly mature LED industry. The sapphire grown in the ASF furnace is consistent and of high quality, which can meet the needs of the company.
The ability of GT to produce LED-grade sapphire over 6 inches in diameter can help accelerate the transition to MOCVD next-generation production tools that can handle larger diameter wafers. The current generation of MOCVD production tools can handle both 2-inch and 4-inch wafers, and larger substrates enable more efficient MOCVD production processes. The wafers produced in the ASF sapphire growth furnace at GT's newly expanded manufacturing facility in Salem, Mass., will be used to produce large diameter cores. This technology is the same as the technology sold to GT ASF equipment customers.
According to GT Advanced Technologies, the agreement further demonstrates that the sapphire material grown in the ASFTM furnace is well suited for use in the LED supply chain. Silian Optoelectronics said: The sapphire grown in the ASF furnace can help Silian and our customers achieve the high output required by the increasingly mature LED industry. The sapphire grown in the ASF furnace is consistent and of high quality, which can meet the needs of the company.
The ability of GT to produce LED-grade sapphire over 6 inches in diameter can help accelerate the transition to MOCVD next-generation production tools that can handle larger diameter wafers. The current generation of MOCVD production tools can handle both 2-inch and 4-inch wafers, and larger substrates enable more efficient MOCVD production processes. The wafers produced in the ASF sapphire growth furnace at GT's newly expanded manufacturing facility in Salem, Mass., will be used to produce large diameter cores. This technology is the same as the technology sold to GT ASF equipment customers.
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